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IRF630NPBF Datasheet
Datasheet specifications
| Datasheet's name | IRF630NSTRLPBF |
|---|---|
| File size | 77.088 KB |
| File type | |
| Number of pages | 11 |
Download Datasheet IRF630NSTRLPBF |
Download Datasheet |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IRF630NPBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 82W
- Total Gate Charge (Qg@Vgs): 35nC@10V
- Drain Source Voltage (Vdss): 200V
- Input Capacitance (Ciss@Vds): 575pF@25V
- Continuous Drain Current (Id): 9.3A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 300mΩ@10V,5.4A
- Package: TO-220
- Manufacturer: Infineon Technologies